Answer: dI_D/dV_G (change in drain current per gate voltage).
- A dI_D/dV_G (change in drain current per gate voltage)
- B V<sub>G</sub>/I<sub>D</sub>, the ratio of gate voltage to drain current
- C R<sub>channel</sub>, the plain ohmic resistance of the conducting channel
- D dV_D/dI_G, the rate of change of drain voltage with gate current
Correct answer: A. dI_D/dV_G (change in drain current per gate voltage)
Explanation: Transconductance: gm = dI_D/dV_GS. Measures how effectively gate voltage controls drain current. Key parameter in MOSFET amplifier design.
Conductors have overlapping bands, semiconductors have a small energy gap that can be bridged by heat or doping, and insulators have a large gap that blocks conduction.
Concept context
Band theory, p-n junction, diodes, transistors, logic gates, and integrated circuits.