Answer: Complete ionization within depletion region and zero carriers (sharp boundary).
- A A gradual, smoothly varying doping profile across the junction
- B Complete ionization within depletion region and zero carriers (sharp boundary)
- C A significant population of mobile carriers within the depletion region
- D An intrinsic, undoped semiconductor on both sides of the junction
Correct answer: B. Complete ionization within depletion region and zero carriers (sharp boundary)
Explanation: Depletion approximation: ionized donors/acceptors present in depletion region; mobile carrier density negligible. Creates abrupt space charge regions.
Conductors have overlapping bands, semiconductors have a small energy gap that can be bridged by heat or doping, and insulators have a large gap that blocks conduction.
Concept context
Band theory, p-n junction, diodes, transistors, logic gates, and integrated circuits.