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⚛️ Physics  ·  Semiconductor Electronics  ·  NEET & JEE

The breakdown mechanism in heavily doped p-n junctions at low reverse voltage:

Answer: Zener breakdown (quantum tunneling across thin depletion region).

  • A Avalanche breakdown, which dominates instead in lightly doped junctions
  • B Zener breakdown (quantum tunneling across thin depletion region)
  • C Thermal breakdown caused by excessive self-heating of the junction
  • D Ohmic breakdown caused by simple resistive heating at high current

Correct answer: B. Zener breakdown (quantum tunneling across thin depletion region)

Explanation: Zener breakdown: occurs in heavily doped junctions with thin depletion layer. Electrons tunnel from valence to conduction band. At < 5-6V typically.

Conductorconduction bandvalence bandbands overlapSemiconductorconduction bandvalence bandsmall gap (~1 eV)Insulatorconduction bandvalence bandlarge gap(> 3 eV)

Conductors have overlapping bands, semiconductors have a small energy gap that can be bridged by heat or doping, and insulators have a large gap that blocks conduction.

Concept context

Band theory, p-n junction, diodes, transistors, logic gates, and integrated circuits.

Read the full Semiconductor Electronics notes →