In an n-type silicon sample the intrinsic concentration is 1.5 10 16 m -3 and the electron concentration is 5 10 22 m -3 . The hole concentration is:

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In an n-type silicon sample the intrinsic concentration is 1.5 × 10¹⁶ m^-3 and the electron concentration is 5 × 10²² m^-3. The hole concentration is:

Answer: 4.5×10⁹ m^-3.

A 2.25×10⁹ m^-3
B 5×10²² m^-3
C 4.5×10⁹ m^-3
D 1.5×10¹⁶ m^-3

Correct answer: C. 4.5×10⁹ m^-3

Explanation: By the mass-action law n_en_h = n_i², so n_h = (1.5 × 10¹⁶)²/(5 × 10²²) = 4.5 × 10⁹ m^-3.

Conductors have overlapping bands, semiconductors have a small energy gap that can be bridged by heat or doping, and insulators have a large gap that blocks conduction.

Concept context

Band theory, p-n junction, diodes, transistors, logic gates, and integrated circuits.

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In an n-type silicon sample the intrinsic concentration is 1.5 &times; 1016 m-3 and the electron concentration is 5 &times; 1022 m-3. The hole concentration is:

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More Semiconductor Electronics questions

In an n-type silicon sample the intrinsic concentration is 1.5 × 10¹⁶ m^-3 and the electron concentration is 5 × 10²² m^-3. The hole concentration is: