Answer: Non-zero output conductance (dI_D/dV_DS) in saturation.
- A A shift in the threshold voltage of the transistor itself
- B Non-zero output conductance (dI_D/dV_DS) in saturation
- C Complete pinch-off of the channel with zero drain current
- D Leakage current flowing directly through the gate oxide
Correct answer: B. Non-zero output conductance (dI_D/dV_DS) in saturation
Explanation: Channel length modulation (lambda parameter): effective channel shortens as V<sub>DS</sub> increases. I<sub>D</sub>,sat = (1/2)mu C<sub>ox</sub>(W/L)(V<sub>GS</sub>-Vth)²(1+lambda V<sub>DS</sub>). Finite output resistance.
Conductors have overlapping bands, semiconductors have a small energy gap that can be bridged by heat or doping, and insulators have a large gap that blocks conduction.
Concept context
Band theory, p-n junction, diodes, transistors, logic gates, and integrated circuits.